Byung-Eun Park,
Hiroshi Ishiwara,
Masanori Okuyama,
Shigeki Sakai,
Sung-Min Yoon
e.a.
Ferroelectric-Gate Field Effect Transistor Memories
Device Physics and Applications
Gebonden Engels 2020 2e druk 9789811512117
Verwachte levertijd ongeveer 9 werkdagen
Samenvatting
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.
This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.
The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Specificaties
ISBN13:9789811512117
Taal:Engels
Bindwijze:gebonden
Uitgever:Springer Nature Singapore
Druk:2
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Inhoudsopgave
<p></p>
<p></p>
<p>Table of contents </p>
<p>Ⅰ Introduction</p>
<p>1 Features, Principles and Developments of Ferroelectric-gate Field Effect Transistors</p>
<p>- Prof. M. Okuyama </p>
<p> Ⅱ Practical Characteristics of Inorganic Ferroelectric-gate FETs : Si-Based Ferroelectric-gate Field Effect Transistors</p><p></p>
<p>2 Development of High-Endurance and Long-Retention FeFETs </p>
<p>of Pt/Ca<sub>y</sub>Sr<sub>1−y</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/(HfO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1−x</sub>/Si Gate Stacks</p>
<p>- Mitsue Takahashi and Shigeki Sakai </p>
<p> </p>
3 Downsizing of high-endurance and long-retention Pt/Ca<sub>y</sub>Sr<sub>1−y</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/(HfO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1−x</sub>/Si FeFETs<p></p>
<p>- Mitsue Takahashi and Shigeki Sakai </p>
<p> </p>
<p>4 Nonvolatile field-effect transistors using ferroelectric doped HfO<sub>2</sub> films</p>
<p> - Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic and Thomas Mikolajick</p>
<p> </p>
<p>5 Switching in nanoscale hafnium oxide based ferroelectric transistor</p>
<p> - Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick and Stefan Slesazeck</p>
<p> </p>
<p> </p>
<p>III Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors</p>
<p> </p>
6 Oxide-channel ferroelectric-gate thin film transistors with nonvolatile memory function <p></p>
<p>- Eisuke Tokumitsu </p>
<p> </p>
7 ZnO/Pb(Zr,Ti)O<sub>3</sub> gate structure Ferroelectric FETs<p></p>
<p>- Yukihiro Kaneko </p>
<p> </p>
8 Novel ferroelectric gate field-effect transistors (FeFETs); controlled polarization-type FeFETs<p></p>
<p>- Norifumi Fujimura and Takeshi Yoshimura</p>
<p> </p>
<p></p>
<p>Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors</p>
<p></p>
<p>9 Non-volatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin films</p>
<p>- Dae-Hee Han and Byung-Eun Park </p>
<p></p>
<p>10 Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferrorlrctric-gate FETs</p>
<p>- Yoshihisa Fujisaki </p>
<p></p>
<p> </p>
<p>V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors</p>
<p></p>
<p>11 P(VDF-TrFE) and P(VDF-TeFE)/organic semiconductor structure ferroelectric-gate FET memories</p>
<p>-Takeshi Kanashima and Masanori Okuyama</p>
<p></p>
<p>12 Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(vinylidene fluoride trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel </p>
<p>-Sung-Min Yoon</p>
<p></p>
<p> </p>
<p>VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates</p>
<p></p>
<p>13 Mechanically Flexible Non-volatile Field Effect Transistor Memories with</p>
<p>Ferroelectric Polymers</p>
-Richard H. Kim and Cheolmin Park<p></p>
<p> </p>
<p>14 Paper Transistors with Organic Ferroelectric P(VDF-TrFE) Thin Films Using a Solution Processing Method</p>
- Dae-Hee Han and Byung-Eun Park <p></p>
<p> </p>
<p>15 Non-volatile Organic Ferroelectric field-effect transistors fabricated on Flexible Substrates</p>
- Dae-Hee Han and Byung-Eun Park <p></p>
<p> </p>
<p> </p>
Ⅶ Applications and Future Prospects<p></p>
<p> </p>
16 Novel applications to NAND flash memory circuits<p></p>
<p>-Shigeki Sakai and Mitsue Takahashi</p>
<p> </p>
17 Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: a Material’s Point of View<p></p>
<p>- Park Min Hyuk Park and Cheol Seong Hwang</p>
<p> </p>
18 Polymorphism of hafnia-based ferroelectrics for ferroelectric field-effect transistors<p></p>
<p>- Min Hyuk Park </p>
<p> </p>
19 Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications<p></p>
<p>-Sung-Min Yoon and Hiroshi Ishiwara</p>
<p> </p>
20 FeFETs for neuromorphic systems<p></p>
<p>- Halid Mulaosmanovic, Thomas Mikolajick and Stefan Slesazeck</p>
<p> </p>
21 Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors <p></p>
<p>-Eisuke Tokumitsu and Tatsuya Shimoda</p>
<p></p>
<p></p>
<p>Table of contents </p>
<p>Ⅰ Introduction</p>
<p>1 Features, Principles and Developments of Ferroelectric-gate Field Effect Transistors</p>
<p>- Prof. M. Okuyama </p>
<p> Ⅱ Practical Characteristics of Inorganic Ferroelectric-gate FETs : Si-Based Ferroelectric-gate Field Effect Transistors</p><p></p>
<p>2 Development of High-Endurance and Long-Retention FeFETs </p>
<p>of Pt/Ca<sub>y</sub>Sr<sub>1−y</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/(HfO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1−x</sub>/Si Gate Stacks</p>
<p>- Mitsue Takahashi and Shigeki Sakai </p>
<p> </p>
3 Downsizing of high-endurance and long-retention Pt/Ca<sub>y</sub>Sr<sub>1−y</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/(HfO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1−x</sub>/Si FeFETs<p></p>
<p>- Mitsue Takahashi and Shigeki Sakai </p>
<p> </p>
<p>4 Nonvolatile field-effect transistors using ferroelectric doped HfO<sub>2</sub> films</p>
<p> - Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic and Thomas Mikolajick</p>
<p> </p>
<p>5 Switching in nanoscale hafnium oxide based ferroelectric transistor</p>
<p> - Halid Mulaosmanovic, Uwe Schroeder, Thomas Mikolajick and Stefan Slesazeck</p>
<p> </p>
<p> </p>
<p>III Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors</p>
<p> </p>
6 Oxide-channel ferroelectric-gate thin film transistors with nonvolatile memory function <p></p>
<p>- Eisuke Tokumitsu </p>
<p> </p>
7 ZnO/Pb(Zr,Ti)O<sub>3</sub> gate structure Ferroelectric FETs<p></p>
<p>- Yukihiro Kaneko </p>
<p> </p>
8 Novel ferroelectric gate field-effect transistors (FeFETs); controlled polarization-type FeFETs<p></p>
<p>- Norifumi Fujimura and Takeshi Yoshimura</p>
<p> </p>
<p></p>
<p>Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors</p>
<p></p>
<p>9 Non-volatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin films</p>
<p>- Dae-Hee Han and Byung-Eun Park </p>
<p></p>
<p>10 Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferrorlrctric-gate FETs</p>
<p>- Yoshihisa Fujisaki </p>
<p></p>
<p> </p>
<p>V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors</p>
<p></p>
<p>11 P(VDF-TrFE) and P(VDF-TeFE)/organic semiconductor structure ferroelectric-gate FET memories</p>
<p>-Takeshi Kanashima and Masanori Okuyama</p>
<p></p>
<p>12 Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(vinylidene fluoride trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel </p>
<p>-Sung-Min Yoon</p>
<p></p>
<p> </p>
<p>VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates</p>
<p></p>
<p>13 Mechanically Flexible Non-volatile Field Effect Transistor Memories with</p>
<p>Ferroelectric Polymers</p>
-Richard H. Kim and Cheolmin Park<p></p>
<p> </p>
<p>14 Paper Transistors with Organic Ferroelectric P(VDF-TrFE) Thin Films Using a Solution Processing Method</p>
- Dae-Hee Han and Byung-Eun Park <p></p>
<p> </p>
<p>15 Non-volatile Organic Ferroelectric field-effect transistors fabricated on Flexible Substrates</p>
- Dae-Hee Han and Byung-Eun Park <p></p>
<p> </p>
<p> </p>
Ⅶ Applications and Future Prospects<p></p>
<p> </p>
16 Novel applications to NAND flash memory circuits<p></p>
<p>-Shigeki Sakai and Mitsue Takahashi</p>
<p> </p>
17 Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: a Material’s Point of View<p></p>
<p>- Park Min Hyuk Park and Cheol Seong Hwang</p>
<p> </p>
18 Polymorphism of hafnia-based ferroelectrics for ferroelectric field-effect transistors<p></p>
<p>- Min Hyuk Park </p>
<p> </p>
19 Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications<p></p>
<p>-Sung-Min Yoon and Hiroshi Ishiwara</p>
<p> </p>
20 FeFETs for neuromorphic systems<p></p>
<p>- Halid Mulaosmanovic, Thomas Mikolajick and Stefan Slesazeck</p>
<p> </p>
21 Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors <p></p>
<p>-Eisuke Tokumitsu and Tatsuya Shimoda</p>
<p></p>
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